- RS-stocknr.:
- 864-8896
- Fabrikantnummer:
- FGP20N60UFDTU
- Fabrikant:
- onsemi
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 864-8896
- Fabrikantnummer:
- FGP20N60UFDTU
- Fabrikant:
- onsemi
Wetgeving en compliance
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 165 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 4.83 x 16.51mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |