- RS-stocknr.:
- 165-6934
- Fabrikantnummer:
- SI2365EDS-T1-GE3
- Fabrikant:
- Vishay
- RS-stocknr.:
- 165-6934
- Fabrikantnummer:
- SI2365EDS-T1-GE3
- Fabrikant:
- Vishay
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 4.7 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 67.5 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Power Dissipation | 1.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +8 V |
Width | 1.4mm |
Length | 3.04mm |
Typical Gate Charge @ Vgs | 23.8 nC @ 8 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Height | 1.02mm |
Minimum Operating Temperature | -50 °C |