P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 Vishay SI2319CDS-T1-GE3
- RS-stocknr.:
- 919-4208
- Fabrikantnummer:
- SI2319CDS-T1-GE3
- Fabrikant:
- Vishay
30000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (op een haspel van 3000)
€ 0,18
(excl. BTW)
€ 0,22
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 3000 + | € 0,18 | € 540,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 919-4208
- Fabrikantnummer:
- SI2319CDS-T1-GE3
- Fabrikant:
- Vishay
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 108 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 3.04mm |
| Typical Gate Charge @ Vgs | 13.6 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 1.4mm |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |