IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET.

How do IGBT transistors work?

IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.

What are the different types of IGBT Transistors?

There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.

What is a difference between MOSFETs and IGBTs?

An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.

An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

What is a typical application of IGBTs?

  • Electric motor

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Omschrijving Prijs Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Configuration Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Dimensions Automotive Standard
RS-stocknr. 671-5424
FabrikantnummerHGTG20N60A4
FabrikantON Semiconductor
€ 3,94
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Aantal stuks
70 A 600 V ±20V - - - TO-247 Through Hole N 3 - Single 15.87 x 4.82 x 20.82mm -
RS-stocknr. 166-2176
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FabrikantON Semiconductor
€ 1,859
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40 A 600 V ±20V 165 W - - TO-220 Through Hole N 3 - Single 10.67 x 4.83 x 16.51mm -
RS-stocknr. 124-1769
FabrikantnummerHGTG20N60A4
FabrikantON Semiconductor
€ 3,088
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70 A 600 V ±20V - - - TO-247 Through Hole N 3 - Single 15.87 x 4.82 x 20.82mm -
RS-stocknr. 864-8896
FabrikantnummerFGP20N60UFDTU
FabrikantON Semiconductor
€ 2,242
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40 A 600 V ±20V 165 W - - TO-220 Through Hole N 3 - Single 10.67 x 4.83 x 16.51mm -
RS-stocknr. 145-4337
FabrikantnummerFGA60N60UFDTU
FabrikantON Semiconductor
€ 3,828
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Aantal stuks
120 A 600 V ±20V 298 W - - TO-3P Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 145-4449
FabrikantnummerFGA30S120P
FabrikantON Semiconductor
€ 2,951
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60 A 1300 V ±25V 348 W - - TO-3PN Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 759-9254
FabrikantnummerFGA60N60UFDTU
FabrikantON Semiconductor
€ 4,80
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120 A 600 V ±20V 298 W - - TO-3P Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 864-8789
FabrikantnummerFGA30S120P
FabrikantON Semiconductor
€ 3,465
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60 A 1300 V ±25V 348 W - - TO-3PN Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 759-9305
FabrikantnummerFGH80N60FDTU
FabrikantON Semiconductor
€ 3,47
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80 A 600 V ±20V 290 W - - TO-247 Through Hole N 3 - Single 15.6 x 4.7 x 20.6mm -
RS-stocknr. 166-1878
FabrikantnummerFGH80N60FDTU
FabrikantON Semiconductor
€ 2,776
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Aantal stuks
80 A 600 V ±20V 290 W - - TO-247 Through Hole N 3 - Single 15.6 x 4.7 x 20.6mm -
RS-stocknr. 759-9282
FabrikantnummerFGH40N65UFDTU
FabrikantON Semiconductor
€ 3,44
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80 A 600 V ±20V 290 W - - TO-247 Through Hole N 3 - Single 15.6 x 4.7 x 20.6mm -
RS-stocknr. 166-1876
FabrikantnummerFGH40N65UFDTU
FabrikantON Semiconductor
€ 2,744
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80 A 600 V ±20V 290 W - - TO-247 Through Hole N 3 - Single 15.6 x 4.7 x 20.6mm -
RS-stocknr. 166-2181
FabrikantnummerFGA60N65SMD
FabrikantON Semiconductor
€ 2,682
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120 A 650 V ±20V 600 W - - TO-3PN Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 864-8795
FabrikantnummerFGA60N65SMD
FabrikantON Semiconductor
€ 3,35
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120 A 650 V ±20V 600 W - - TO-3PN Through Hole N 3 - Single 15.8 x 5 x 20.1mm -
RS-stocknr. 739-4942
FabrikantnummerFGH40N60SMDF
FabrikantON Semiconductor
€ 3,76
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80 A 600 V ±20V 349 W - - TO-247AB Through Hole N 3 - Single 15.6 x 4.7 x 20.6mm -
RS-stocknr. 163-2676
FabrikantnummerNGTB40N120FL3WG
FabrikantON Semiconductor
€ 3,569
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160 A 1200 V ±20V 454 W - - TO-247 Through Hole N 3 1MHz Single 16.25 x 5.3 x 21.4mm -
RS-stocknr. 671-5408
FabrikantnummerFGL40N120ANDTU
FabrikantON Semiconductor
€ 5,83
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64 A 1200 V ±25V - - - TO-264 Through Hole N 3 - Single 20 x 5 x 26mm -
RS-stocknr. 123-8831
FabrikantnummerNGTB40N120FL3WG
FabrikantON Semiconductor
€ 4,475
Each (In a Pack of 2)
Aantal stuks
160 A 1200 V ±20V 454 W - - TO-247 Through Hole N 3 1MHz Single 16.25 x 5.3 x 21.4mm -
RS-stocknr. 124-1368
FabrikantnummerFGA25N120ANTDTU
FabrikantON Semiconductor
€ 2,412
Each (In a Tube of 30)
Aantal stuks
50 A 1200 V ±20V 312 W - - TO-3P Through Hole N 3 1MHz Single 15.8 x 5 x 18.9mm -
RS-stocknr. 772-9222
FabrikantnummerFGA25N120ANTDTU
FabrikantON Semiconductor
€ 2,84
Each (In a Pack of 2)
Aantal stuks
50 A 1200 V ±20V 312 W - - TO-3P Through Hole N 3 1MHz Single 15.8 x 5 x 18.9mm -