BCP53T1G PNP Transistor, 1.5 A, -80 V dc, 3 + Tab-Pin SOT-223

Datasheets
Wetgeving en compliance
Conform
Land van herkomst: MY
Productomschrijving

This PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-223, which is designed for low power surface mount applications.

High Current: 1.5 Amps
NPN Complement is BCP56
The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
Available in 12 mm Tape and Reel Use BCP53T1G to order the 7 inch/1000 unit reel. Use BCP53T3G to order the 13 inch/4000 unit reel.
Device Marking: BCP53 = AH, BCP53-10 = AH-10, BCP53-16 = AH-16
These Devices are PbFree, Halogen Free/BFR Free

Specificaties
Kenmerk Waarde
Transistor Type PNP
Maximum DC Collector Current 1.5 A
Maximum Collector Emitter Voltage -80 V dc
Package Type SOT-223
Mounting Type Surface Mount
Maximum Power Dissipation 1.5 W
Minimum DC Current Gain 25
Transistor Configuration Single
Maximum Collector Base Voltage -100 V dc
Maximum Emitter Base Voltage -5 V dc
Maximum Operating Frequency 35 MHz
Pin Count 3 + Tab
Number of Elements per Chip 1
Height 1.65mm
Dimensions 6.7 x 3.7 x 1.65mm
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Maximum Collector Emitter Saturation Voltage -0.5 V dc
Length 6.7mm
Transistor Material Si
Width 3.7mm
Automotive Standard AEC-Q101
6000 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (On a Reel of 1000)
0,082
(excl. BTW)
0,099
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
1000 - 9000
€ 0,082
€ 82,00
10000 +
€ 0,068
€ 68,00
*prijsindicatie
Related Products
60 V, 10 A PNP high power bipolar ...
Description:
60 V, 10 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement PHPT60610NY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit ...
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
Description:
The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications. Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpExcellent Power Dissipation - PD = 30 W @ ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.