Nexperia PBSS4350Z,135 NPN Transistor, 3 A, 50 V, 4-Pin SOT-223

  • RS-stocknr. 518-1693
  • Fabrikantnummer PBSS4350Z,135
  • Fabrikant Nexperia
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specificaties
Kenmerk Waarde
Transistor Type NPN
Maximum DC Collector Current 3 A
Maximum Collector Emitter Voltage 50 V
Package Type SOT-223 (SC-73)
Mounting Type Surface Mount
Maximum Power Dissipation 2 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 4
Number of Elements per Chip 1
Length 6.7mm
Dimensions 1.7 x 6.7 x 3.7mm
Maximum Operating Temperature +150 °C
Maximum Collector Emitter Saturation Voltage 0.29 V
Maximum Base Emitter Saturation Voltage 1.2 V
Minimum Operating Temperature -65 °C
Width 3.7mm
Height 1.7mm
90 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 10)
0,292
(excl. BTW)
0,353
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
10 - 10
€ 0,292
€ 2,92
20 - 40
€ 0,217
€ 2,17
50 - 90
€ 0,176
€ 1,76
100 - 190
€ 0,124
€ 1,24
200 +
€ 0,122
€ 1,22
*prijsindicatie
Verpakkingsopties
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.