Nexperia PBSS5580PA,115 PNP Transistor, 4 A, 80 V, 3-Pin HUSON

  • RS-stocknr. 815-0670
  • Fabrikantnummer PBSS5580PA,115
  • Fabrikant Nexperia
Datasheets
Wetgeving en compliance
Conform
Land van herkomst: HK
Productomschrijving

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specificaties
Kenmerk Waarde
Transistor Type PNP
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V
Package Type HUSON
Mounting Type Surface Mount
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Collector Base Voltage -80 V
Maximum Emitter Base Voltage -7 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Dimensions 2.1 x 2.1 x 0.65mm
Maximum Base Emitter Saturation Voltage -0.9 V
Maximum Collector Emitter Saturation Voltage -60 mV
60 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Pack of 20)
0,284
(excl. BTW)
0,344
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
20 - 20
€ 0,284
€ 5,68
40 - 180
€ 0,184
€ 3,68
200 - 380
€ 0,178
€ 3,56
400 - 780
€ 0,175
€ 3,50
800 +
€ 0,17
€ 3,40
*prijsindicatie
Verpakkingsopties
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