onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:1000, 3 + Tab-Pin SOT-223
- RS-stocknr.:
- 463-117
- Fabrikantnummer:
- BSP52T1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 8,15
(excl. BTW)
€ 9,85
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 25 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 1.100 stuk(s) vanaf 12 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,326 | € 8,15 |
| 100 - 225 | € 0,281 | € 7,03 |
| 250 - 475 | € 0,244 | € 6,10 |
| 500 + | € 0,214 | € 5,35 |
*prijsindicatie
- RS-stocknr.:
- 463-117
- Fabrikantnummer:
- BSP52T1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Transistor Type | NPN | |
| Maximum Continuous Collector Current | 1 A | |
| Maximum Collector Emitter Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain | 1000 | |
| Maximum Base Emitter Saturation Voltage | 1.9 V | |
| Maximum Collector Base Voltage | 90 V | |
| Maximum Collector Emitter Saturation Voltage | 1.3 V | |
| Height | 1.57mm | |
| Minimum Operating Temperature | -65 °C | |
| Dimensions | 6.5 x 3.5 x 1.57mm | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Transistor Type NPN | ||
Maximum Continuous Collector Current 1 A | ||
Maximum Collector Emitter Voltage 80 V | ||
Maximum Emitter Base Voltage 5 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain 1000 | ||
Maximum Base Emitter Saturation Voltage 1.9 V | ||
Maximum Collector Base Voltage 90 V | ||
Maximum Collector Emitter Saturation Voltage 1.3 V | ||
Height 1.57mm | ||
Minimum Operating Temperature -65 °C | ||
Dimensions 6.5 x 3.5 x 1.57mm | ||
Width 3.5mm | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Vrijgesteld
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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