onsemi TIP110G NPN Darlington Transistor, 5 A dc 60 V dc HFE:500, 3-Pin TO-220
- RS-stocknr.:
- 186-7439
- Fabrikantnummer:
- TIP110G
- Fabrikant:
- onsemi
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 01-08-2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in eentube van 50)
€ 0,654
(excl. BTW)
€ 0,791
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 50 - 50 | € 0,654 | € 32,70 |
| 100 - 450 | € 0,474 | € 23,70 |
| 500 - 950 | € 0,403 | € 20,15 |
| 1000 - 2450 | € 0,349 | € 17,45 |
| 2500 + | € 0,348 | € 17,40 |
| *prijsindicatie | ||
- RS-stocknr.:
- 186-7439
- Fabrikantnummer:
- TIP110G
- Fabrikant:
- onsemi
Datasheets
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.
High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Specificaties
Kenmerk | Waarde |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 5 A dc |
| Maximum Collector Emitter Voltage | 60 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 500 |
| Maximum Collector Base Voltage | 60 V dc |
| Maximum Collector Emitter Saturation Voltage | 2.5 V dc |
| Width | 4.83mm |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Height | 15.75mm |
| Length | 10.53mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Maximum Power Dissipation | 50 W |