Cypress Semiconductor FM25V20A-DGQ Serial-SPI FRAM Memory, 2Mbit 8-Pin DFN

Datasheets
Wetgeving en compliance
Conform
Productomschrijving

2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K ´ 8
High-endurance 10 trillion (1014) read/writes
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 33 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
3 mA active current at 33 MHz
400 A standby current
12 A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Extended temperature: –40 °C to +105 °C
8-pin thin dual flat no leads (DFN) package

Specificaties
Kenmerk Waarde
Memory Size 2Mbit
Organisation 256 kB x 8
Interface Type Serial-SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type DFN
Pin Count 8
Dimensions 6 x 5 x 0.7mm
Length 6mm
Maximum Operating Supply Voltage 3.6 V
Width 5mm
Height 0.7mm
Maximum Operating Temperature +105 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Number of Words 256K
Minimum Operating Supply Voltage 2 V
169 op voorraad - levertijd is 2 werkdag(en).
Prijs Each
14,15
(excl. BTW)
17,12
(incl. BTW)
Aantal stuks
Per stuk
1 - 4
€ 14,15
5 - 24
€ 11,52
25 - 49
€ 11,21
50 - 99
€ 10,93
100 +
€ 10,66
Verpakkingsopties
Related Products
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and ...
Description:
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM MemoryFast write ...