Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount
- RS-stocknr.:
- 168-8761
- Fabrikantnummer:
- F475R12KS4B11BOSA1
- Fabrikant:
- Infineon
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Elk (in een doos van 10)
€ 104,588
(excl. BTW)
€ 126,551
(incl. BTW)
| Aantal stuks | Per stuk | Per Doos* |
| 10 + | € 104,588 | € 1.045,88 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-8761
- Fabrikantnummer:
- F475R12KS4B11BOSA1
- Fabrikant:
- Infineon
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 500 W |
| Package Type | ECONO2 |
| Configuration | Dual Half Bridge |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 24 |
| Switching Speed | 1MHz |
| Transistor Configuration | Dual Half Bridge |
| Dimensions | 107.5 x 45 x 17mm |
| Maximum Operating Temperature | +125 °C |
| Minimum Operating Temperature | -40 °C |