- RS-stocknr.:
- 195-8768
- Fabrikantnummer:
- NXH100B120H3Q0PTG
- Fabrikant:
- onsemi
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Elk (in een bak van 24)
€ 69,368
(excl. BTW)
€ 83,935
(incl. BTW)
Aantal stuks | Per stuk | Per tray* |
24 + | € 69,368 | € 1.664,832 |
*prijsindicatie |
- RS-stocknr.:
- 195-8768
- Fabrikantnummer:
- NXH100B120H3Q0PTG
- Fabrikant:
- onsemi
Datasheets
Wetgeving en compliance
Productomschrijving
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 186 W |
Package Type | Q0BOOST |
Configuration | Dual |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 22 |
Transistor Configuration | Dual |
Dimensions | 66.2 x 32.8 x 11.9mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |