IXYS IXDH20N120D1 IGBT, 38 A 1200 V, 3-Pin TO-247AD, Through Hole
- RS-stocknr.:
- 192-657
- Fabrikantnummer:
- IXDH20N120D1
- Fabrikant:
- IXYS
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- RS-stocknr.:
- 192-657
- Fabrikantnummer:
- IXDH20N120D1
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 38 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 192-657
- Fabrikantnummer:
- IXDH20N120D1
- Fabrikant:
- IXYS