- RS-stocknr.:
- 194-899
- Fabrikantnummer:
- IXGH32N170
- Fabrikant:
- IXYS
Tijdelijk niet op voorraad – nieuwe voorraad verwacht op 20-12-2024, met een levertijd van 1 werkdag.
Toegevoegd
Prijs Per stuk
€ 30,14
(excl. BTW)
€ 36,47
(incl. BTW)
Aantal stuks | Per stuk |
1 - 4 | € 30,14 |
5 - 19 | € 25,95 |
20 - 49 | € 24,87 |
50 - 99 | € 22,54 |
100 + | € 21,97 |
- RS-stocknr.:
- 194-899
- Fabrikantnummer:
- IXGH32N170
- Fabrikant:
- IXYS
Datasheets
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |