Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS-stocknr.:
- 110-9135
- Fabrikantnummer:
- 7MBR50VB-120-50
- Fabrikant:
- Fuji Electric
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Per stuk
€ 65,84
(excl. BTW)
€ 79,67
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 + | € 65,84 |
- RS-stocknr.:
- 110-9135
- Fabrikantnummer:
- 7MBR50VB-120-50
- Fabrikant:
- Fuji Electric
Datasheets
Wetgeving en compliance
Productomschrijving
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 280 W |
| Package Type | M712 |
| Configuration | 3 Phase Bridge |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 110-9135
- Fabrikantnummer:
- 7MBR50VB-120-50
- Fabrikant:
- Fuji Electric