ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P

Datasheets
Wetgeving en compliance
Conform
Productomschrijving

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 312 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.8mm
Width 5mm
Height 18.9mm
Dimensions 15.8 x 5 x 18.9mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
690 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Tube of 30)
2,575
(excl. BTW)
3,116
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
30 - 30
€ 2,575
€ 77,25
60 - 120
€ 2,446
€ 73,38
150 - 270
€ 2,22
€ 66,60
300 - 570
€ 2,112
€ 63,36
600 +
€ 1,895
€ 56,85
*prijsindicatie
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