ON Semiconductor HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247

Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 70 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
1170 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Tube of 30)
3,428
(excl. BTW)
4,148
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
30 - 120
€ 3,428
€ 102,84
150 - 270
€ 2,965
€ 88,95
300 +
€ 2,828
€ 84,84
*prijsindicatie
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