Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
- RS-stocknr.:
- 124-3700
- Fabrikantnummer:
- RJH60D3DPP-M0#T2
- Fabrikant:
- Renesas Electronics
Op voorraad - levertijd 3 à 5 werkdagen.
Toegevoegd
Prijs Elk (in een pakket van 2)
€ 3,55
(excl. BTW)
€ 4,30
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 2 - 2 | € 3,55 | € 7,10 |
| 4 - 8 | € 3,20 | € 6,40 |
| 10 - 48 | € 2,91 | € 5,82 |
| 50 - 98 | € 2,665 | € 5,33 |
| 100 + | € 2,46 | € 4,92 |
| *prijsindicatie | ||
- RS-stocknr.:
- 124-3700
- Fabrikantnummer:
- RJH60D3DPP-M0#T2
- Fabrikant:
- Renesas Electronics
Wetgeving en compliance
- Land van herkomst:
- JP
Productomschrijving
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 40 W |
| Package Type | TO-220FL |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Gate Capacitance | 900pF |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 124-3700
- Fabrikantnummer:
- RJH60D3DPP-M0#T2
- Fabrikant:
- Renesas Electronics