IXYS IXXK110N65B4H1 IGBT, 570 A 650 V, 3-Pin TO-264, Through Hole
- RS-stocknr.:
- 125-8051
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Tijdelijk niet op voorraad – nieuwe voorraad verwacht op 11-04-2025, met een levertijd van 1 werkdag.
Toegevoegd
Prijs Per stuk
€ 17,01
(excl. BTW)
€ 20,58
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 1 | € 17,01 |
| 2 - 4 | € 15,26 |
| 5 - 9 | € 14,48 |
| 10 - 24 | € 13,79 |
| 25 + | € 13,08 |
- RS-stocknr.:
- 125-8051
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 570 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 880 W |
| Number of Transistors | 1 |
| Package Type | TO-264 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 10 → 30kHz |
| Transistor Configuration | Single |
| Dimensions | 20.3 x 5.3 x 26.6mm |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 3mJ |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 125-8051
- Fabrikantnummer:
- IXXK110N65B4H1
- Fabrikant:
- IXYS