- RS-stocknr.:
- 162-3318
- Fabrikantnummer:
- IKY75N120CH3XKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 162-3318
- Fabrikantnummer:
- IKY75N120CH3XKSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses Ets.
Extremely low control inductance loop with extra emitter pin for driver feedback
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 150 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 938 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 4 |
Switching Speed | 60kHz |
Transistor Configuration | Single |
Dimensions | 15.9 x 5.1 x 22.5mm |
Gate Capacitance | 4856pF |
Energy Rating | 6.3mJ |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |