ON Semiconductor FGP20N60UFDTU IGBT, 40 A 600 V, 3-Pin TO-220

Datasheets
Wetgeving en compliance
Conform
Land van herkomst: KR
Productomschrijving

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 165 W
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.67mm
Width 4.83mm
Height 16.51mm
Dimensions 10.67 x 4.83 x 16.51mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
1200 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Tube of 50)
2,016
(excl. BTW)
2,439
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
50 +
€ 2,016
€ 100,80
*prijsindicatie
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