onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS-stocknr.:
- 166-2181
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Toegevoegd
Prijs Elk (in eentube van 30)
€ 4,176
(excl. BTW)
€ 5,053
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 30 - 90 | € 4,176 | € 125,28 |
| 120 - 240 | € 3,671 | € 110,13 |
| 270 - 480 | € 3,583 | € 107,49 |
| 510 + | € 3,182 | € 95,46 |
| *prijsindicatie | ||
- RS-stocknr.:
- 166-2181
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Wetgeving en compliance
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 166-2181
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi