- RS-stocknr.:
- 168-4412
- Fabrikantnummer:
- IXGH30N120B3D1
- Fabrikant:
- IXYS
- RS-stocknr.:
- 168-4412
- Fabrikantnummer:
- IXGH30N120B3D1
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |