STMicroelectronics STGE200NB60S IGBT, 200 A 600 V, 4-Pin ISOTOP

Datasheets
Wetgeving en compliance
Conform
Land van herkomst: MY
Productomschrijving

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type ISOTOP
Mounting Type Panel Mount
Channel Type N
Pin Count 4
Transistor Configuration Single
Length 38.2mm
Width 25.5mm
Height 9.1mm
Dimensions 38.2 x 25.5 x 9.1mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
60 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Tube of 10)
22,757
(excl. BTW)
27,536
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
10 +
€ 22,757
€ 227,57
*prijsindicatie
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