ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
- RS-stocknr.:
- 171-5593
- Fabrikantnummer:
- RGT30NS65DGC9
- Fabrikant:
- ROHM
Op voorraad - levertijd 3 à 5 werkdagen.
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 2,564
(excl. BTW)
€ 3,102
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 45 | € 2,564 | € 12,82 |
| 50 - 95 | € 2,304 | € 11,52 |
| 100 - 245 | € 2,092 | € 10,46 |
| 250 - 495 | € 1,924 | € 9,62 |
| 500 + | € 1,778 | € 8,89 |
| *prijsindicatie | ||
- RS-stocknr.:
- 171-5593
- Fabrikantnummer:
- RGT30NS65DGC9
- Fabrikant:
- ROHM
Wetgeving en compliance
- Land van herkomst:
- JP
Productomschrijving
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | 30V |
| Maximum Power Dissipation | 133 W |
| Number of Transistors | 1 |
| Package Type | TO-262 |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Dimensions | 10.1 x 4.5 x 9mm |
| Gate Capacitance | 780pF |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |