- RS-stocknr.:
- 171-5627
- Fabrikantnummer:
- RGT40NS65DGC9
- Fabrikant:
- ROHM
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 171-5627
- Fabrikantnummer:
- RGT40NS65DGC9
- Fabrikant:
- ROHM
Wetgeving en compliance
Productomschrijving
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | 30V |
Maximum Power Dissipation | 161 W |
Number of Transistors | 1 |
Package Type | TO-262 |
Mounting Type | Through Hole |
Channel Type | P |
Pin Count | 3+Tab |
Transistor Configuration | Single |
Dimensions | 10.1 x 4.5 x 9mm |
Minimum Operating Temperature | -40 °C |
Gate Capacitance | 1070pF |
Maximum Operating Temperature | +175 °C |