MOSFET Vishay SIA817EDJ-T1-GE3
- RS-stocknr.:
- 180-7827
- Fabrikantnummer:
- SIA817EDJ-T1-GE3
- Fabrikant:
- Vishay
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Toegevoegd
Prijs Elk (in een pakket van 25)
€ 0,418
(excl. BTW)
€ 0,506
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 25 - 225 | € 0,418 | € 10,45 |
| 250 - 600 | € 0,41 | € 10,25 |
| 625 - 1225 | € 0,31 | € 7,75 |
| 1250 - 2475 | € 0,247 | € 6,175 |
| 2500 + | € 0,188 | € 4,70 |
| *prijsindicatie | ||
- RS-stocknr.:
- 180-7827
- Fabrikantnummer:
- SIA817EDJ-T1-GE3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.
Little foot plus Schottky power MOSFET
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)
Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile
Typical ESD protection (MOSFET): 1500 V (HBM)