MOSFET Vishay SQJ457EP-T1_GE3
- RS-stocknr.:
- 180-7972
- Fabrikantnummer:
- SQJ457EP-T1_GE3
- Fabrikant:
- Vishay
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 04-04-2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in een pakket van 20)
€ 0,825
(excl. BTW)
€ 0,998
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 20 - 80 | € 0,825 | € 16,50 |
| 100 - 180 | € 0,619 | € 12,38 |
| 200 - 480 | € 0,511 | € 10,22 |
| 500 - 980 | € 0,454 | € 9,08 |
| 1000 + | € 0,442 | € 8,84 |
| *prijsindicatie | ||
- RS-stocknr.:
- 180-7972
- Fabrikantnummer:
- SQJ457EP-T1_GE3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-263-3 package is a new age product with a drain-source voltage of 60V and maximum gate-source voltage of 20V. It has a drain-source resistance of 6.7mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Applications
• Adaptor switches
• DC/DC primary switches
• Load switches
• Power management
• DC/DC primary switches
• Load switches
• Power management
Certifications
• AEC-Q101 qualified
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested