- RS-stocknr.:
- 185-1017
- Fabrikantnummer:
- RGT00TS65DGC11
- Fabrikant:
- ROHM
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 185-1017
- Fabrikantnummer:
- RGT00TS65DGC11
- Fabrikant:
- ROHM
Datasheets
Wetgeving en compliance
- Land van herkomst:
- TH
Productomschrijving
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating , RoHS Compliant
Low Switching Loss
Short Circuit Withstand Time 5us
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating , RoHS Compliant
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 85 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 277 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16 x 5 x 21mm |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 2770pF |
Minimum Operating Temperature | -40 °C |