ROHM BM63767S-VC IGBT, ±30 A 600 V, 25-Pin HSDIP, Through Hole
- RS-stocknr.:
- 185-1033
- Fabrikantnummer:
- BM63767S-VC
- Fabrikant:
- ROHM
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- RS-stocknr.:
- 185-1033
- Fabrikantnummer:
- BM63767S-VC
- Fabrikant:
- ROHM
Datasheets
Wetgeving en compliance
- Land van herkomst:
- JP
Productomschrijving
BM63767S-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, IGBTs, fly wheel diodes.
3phase DC/AC Inverter
600V/30A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC): SOI (Silicon On Insulator) Process, Drive Circuit, High Voltage Level Shifting, Current Limit for Bootstrap Diode, Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC): Drive Circuit, Short Circuit Current Protection (SCP), Control Supply Under Voltage Locked Out (UVLO), Thermal Shutdown (TSD)
Fault Signal(LVIC) Corresponding to SCP (Low Side IGBT), TSD, UVLO Fault
Input Interface 3.3V, 5V Line
600V/30A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC): SOI (Silicon On Insulator) Process, Drive Circuit, High Voltage Level Shifting, Current Limit for Bootstrap Diode, Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC): Drive Circuit, Short Circuit Current Protection (SCP), Control Supply Under Voltage Locked Out (UVLO), Thermal Shutdown (TSD)
Fault Signal(LVIC) Corresponding to SCP (Low Side IGBT), TSD, UVLO Fault
Input Interface 3.3V, 5V Line
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | ±30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Number of Transistors | 6 |
| Maximum Power Dissipation | 59 W |
| Package Type | HSDIP |
| Mounting Type | Through Hole |
| Pin Count | 25 |
| Dimensions | 38 x 24 x 3.5mm |
| Minimum Operating Temperature | -25 °C |
| Maximum Operating Temperature | +125 °C |