ON Semiconductor HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247

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Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 70 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 4.82mm
Height 20.82mm
Dimensions 15.87 x 4.82 x 20.82mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
256 op voorraad - levertijd is 1 werkdag(en).
Prijs Each
4,19
(excl. BTW)
5,07
(incl. BTW)
Aantal stuks
Per stuk
1 - 4
€ 4,19
5 - 9
€ 4,06
10 - 14
€ 3,98
15 - 19
€ 3,85
20 +
€ 3,77
Verpakkingsopties
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