STMicroelectronics STGW20NC60VD IGBT, 60 A 600 V, 3-Pin TO-247

Datasheets
Wetgeving en compliance
Conform
Land van herkomst: CN
Productomschrijving

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
247 op voorraad - levertijd is 1 werkdag(en).
Prijs Each
3,41
(excl. BTW)
4,13
(incl. BTW)
Aantal stuks
Per stuk
1 - 9
€ 3,41
10 - 49
€ 2,34
50 - 149
€ 2,19
150 - 499
€ 2,04
500 +
€ 1,72
Verpakkingsopties
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