Infineon IRG7PH35UD1PBF IGBT, 50 A 1200 V, 3-Pin TO-247AC

  • RS-stocknr. 737-7568
  • Fabrikantnummer IRG7PH35UD1PBF
  • Fabrikant Infineon
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Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 50 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 179 W
Package Type TO-247AC
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.87mm
Width 5.31mm
Height 20.7mm
Dimensions 15.87 x 5.31 x 20.7mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
2 op voorraad - levertijd is 2 werkdag(en).
Prijs Each
4,95
(excl. BTW)
5,99
(incl. BTW)
Aantal stuks
Per stuk
1 +
€ 4,95
Verpakkingsopties