STMicroelectronics STGW20V60F IGBT, 20 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 791-7621
- Fabrikantnummer:
- STGW20V60F
- Fabrikant:
- STMicroelectronics
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Toegevoegd
Prijs Elk (in een pakket van 5)
€ 3,422
(excl. BTW)
€ 4,141
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 20 | € 3,422 | € 17,11 |
| 25 - 45 | € 3,25 | € 16,25 |
| 50 - 120 | € 2,926 | € 14,63 |
| 125 - 245 | € 2,634 | € 13,17 |
| 250 + | € 2,50 | € 12,50 |
| *prijsindicatie | ||
- RS-stocknr.:
- 791-7621
- Fabrikantnummer:
- STGW20V60F
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 167 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
- RS-stocknr.:
- 791-7621
- Fabrikantnummer:
- STGW20V60F
- Fabrikant:
- STMicroelectronics