STMicroelectronics STGFW30V60DF IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS-stocknr.:
- 792-5779
- Fabrikantnummer:
- STGFW30V60DF
- Fabrikant:
- STMicroelectronics
72 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in een pakket van 2)
€ 2,565
(excl. BTW)
€ 3,104
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 2 - 8 | € 2,565 | € 5,13 |
| 10 - 18 | € 2,435 | € 4,87 |
| 20 - 48 | € 2,19 | € 4,38 |
| 50 - 98 | € 1,97 | € 3,94 |
| 100 + | € 1,875 | € 3,75 |
| *prijsindicatie | ||
- RS-stocknr.:
- 792-5779
- Fabrikantnummer:
- STGFW30V60DF
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 58 W |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.7 x 5.7 x 26.7mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |