- RS-stocknr.:
- 795-7041
- Fabrikantnummer:
- STGB10NC60HDT4
- Fabrikant:
- STMicroelectronics
35 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
925 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 1,578
(excl. BTW)
€ 1,909
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
5 - 20 | € 1,578 | € 7,89 |
25 - 45 | € 1,498 | € 7,49 |
50 - 120 | € 1,35 | € 6,75 |
125 - 245 | € 1,214 | € 6,07 |
250 + | € 1,154 | € 5,77 |
*prijsindicatie |
- RS-stocknr.:
- 795-7041
- Fabrikantnummer:
- STGB10NC60HDT4
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 65 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |