- RS-stocknr.:
- 795-7142
- Fabrikantnummer:
- STGF10NC60KD
- Fabrikant:
- STMicroelectronics
20 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
40 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Elk (in een pakket van 10)
€ 0,965
(excl. BTW)
€ 1,168
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
10 - 40 | € 0,965 | € 9,65 |
50 - 90 | € 0,916 | € 9,16 |
100 - 240 | € 0,861 | € 8,61 |
250 - 490 | € 0,839 | € 8,39 |
500 + | € 0,818 | € 8,18 |
*prijsindicatie |
- RS-stocknr.:
- 795-7142
- Fabrikantnummer:
- STGF10NC60KD
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 9 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 25 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 16.4mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |