- RS-stocknr.:
- 795-9209
- Fabrikantnummer:
- STGW39NC60VD
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 03-03-2025, met een levertijd van 2 à 3 werkdagen.
Prijs Elk (in een pakket van 2)
€ 5,195
(excl. BTW)
€ 6,286
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
2 - 8 | € 5,195 | € 10,39 |
10 - 98 | € 4,42 | € 8,84 |
100 - 498 | € 3,54 | € 7,08 |
500 - 998 | € 3,15 | € 6,30 |
1000 + | € 2,66 | € 5,32 |
*prijsindicatie |
- RS-stocknr.:
- 795-9209
- Fabrikantnummer:
- STGW39NC60VD
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 250 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |