IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- RS-stocknr.:
- 804-7616
- Fabrikantnummer:
- IXDN55N120D1
- Fabrikant:
- IXYS
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 24-06-2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk
€ 34,83
(excl. BTW)
€ 42,14
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 1 | € 34,83 |
| 2 - 4 | € 33,88 |
| 5 - 9 | € 32,97 |
| 10 - 29 | € 32,14 |
| 30 + | € 31,32 |
- RS-stocknr.:
- 804-7616
- Fabrikantnummer:
- IXDN55N120D1
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 450 W |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 38.2 x 25.07 x 9.6mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |
- RS-stocknr.:
- 804-7616
- Fabrikantnummer:
- IXDN55N120D1
- Fabrikant:
- IXYS