Infineon IGW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 826-8248
Fabrikantnummer:: IGW40N120H3FKSA1
Fabrikant:: Infineon

Infineon IGW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Toegevoegd

Prijs Per stuk

€ 5,41

(excl. BTW)

€ 6,55

(incl. BTW)

Aantal stuks	Per stuk
1 +	€ 5,41

RS-stocknr.:: 826-8248
Fabrikantnummer:: IGW40N120H3FKSA1
Fabrikant:: Infineon

Datasheets

Wetgeving en compliance

Productomschrijving

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties

Kenmerk	Waarde
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	483 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C

RS-stocknr.:: 826-8248
Fabrikantnummer:: IGW40N120H3FKSA1
Fabrikant:: Infineon