- RS-stocknr.:
- 829-7120
- Fabrikantnummer:
- STGF15H60DF
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 21-10-2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 1,67
(excl. BTW)
€ 2,02
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
5 - 20 | € 1,67 | € 8,35 |
25 - 45 | € 1,59 | € 7,95 |
50 - 120 | € 1,426 | € 7,13 |
125 - 245 | € 1,286 | € 6,43 |
250 + | € 1,22 | € 6,10 |
*prijsindicatie |
- RS-stocknr.:
- 829-7120
- Fabrikantnummer:
- STGF15H60DF
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 30 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 16.4mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |