onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS-stocknr.:
- 864-8795
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
1 op voorraad - levertijd is 1 werkdag(en)
Toegevoegd
Prijs Per stuk
€ 5,87
(excl. BTW)
€ 7,10
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 9 | € 5,87 |
| 10 - 99 | € 4,65 |
| 100 - 249 | € 4,08 |
| 250 - 499 | € 4,00 |
| 500 + | € 3,55 |
- RS-stocknr.:
- 864-8795
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Wetgeving en compliance
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 864-8795
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi