STMicroelectronics STGP10M65DF2 IGBT, 20 A 650 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 906-2795
- Fabrikantnummer:
- STGP10M65DF2
- Fabrikant:
- STMicroelectronics
75 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 1,31
(excl. BTW)
€ 1,59
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 20 | € 1,31 | € 6,55 |
| 25 - 45 | € 1,248 | € 6,24 |
| 50 - 120 | € 1,12 | € 5,60 |
| 125 - 245 | € 1,01 | € 5,05 |
| 250 + | € 0,958 | € 4,79 |
| *prijsindicatie | ||
- RS-stocknr.:
- 906-2795
- Fabrikantnummer:
- STGP10M65DF2
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 20 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 115 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 15.75mm |
| Gate Capacitance | 840pF |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 0.66mJ |
| Maximum Operating Temperature | +175 °C |