Infineon IKW40N120H3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247

  • RS-stocknr. 911-4773
  • Fabrikantnummer IKW40N120H3FKSA1
  • Fabrikant Infineon
Wetgeving en compliance
Land van herkomst: DE

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Kenmerk Waarde
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 483 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.03mm
Width 5.16mm
Height 21.1mm
Dimensions 16.03 x 5.16 x 21.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
870 op voorraad - levertijd is 2 werkdag(en).
Prijs Each (In a Tube of 30)
(excl. BTW)
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
30 - 120
€ 6,577
€ 197,31
150 +
€ 5,729
€ 171,87