ON Semiconductor J112 N-Channel JFET, Idss min. 5mA, 3-Pin TO-92

Datasheets
Wetgeving en compliance
Conform
Productomschrijving

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specificaties
Kenmerk Waarde
Channel Type N
Idss Drain-Source Cut-off Current Min. 5mA
Maximum Gate Source Voltage -35 V
Maximum Drain Gate Voltage 35V
Transistor Configuration Single
Configuration Single
Maximum Drain Source Resistance 50 Ω
Mounting Type Through Hole
Package Type TO-92
Pin Count 3
Drain Gate On-Capacitance 28pF
Source Gate On-Capacitance 28pF
Dimensions 5.2 x 4.19 x 5.33mm
Length 5.2mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Width 4.19mm
Height 5.33mm
150 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
5250 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each (In a Pack of 50)
0,265
(excl. BTW)
0,321
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
50 - 450
€ 0,265
€ 13,25
500 +
€ 0,198
€ 9,90
*prijsindicatie
Verpakkingsopties
Related Products
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
The ON Semiconductor J111 is a JFET chopper ...
Description:
The ON Semiconductor J111 is a JFET chopper transistor designed for analogue switching and chopper applications. The source and drain are interchangeable. The J111 transistor comes in a TO-92 3-pin through-hole package. Versions Available:806-1753 - pack of 50166-2910 - bag ...
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.