Infineon IR2184STRPBF Dual Half Bridge MOSFET Power Driver, 1.9 A, 2.3 A, 10 → 20 V 8-Pin, SOIC

  • RS-stocknr. 170-2292
  • Fabrikantnummer IR2184STRPBF
  • Fabrikant Infineon
Datasheets
Wetgeving en compliance
Conform
Productomschrijving

MOSFET & IGBT Gate Drivers, Half-Bridge, Infineon

Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in half bridge configurations.

MOSFET & IGBT Drivers, Infineon (International Rectifier)

Specificaties
Kenmerk Waarde
Number of Drivers 2
Minimum Operating Supply Voltage 10 V
Maximum Operating Supply Voltage 20 V
Mounting Type Surface Mount
Peak Output Current 1.9 A, 2.3 A
Number of Outputs 2
Polarity Inverting, Non-Inverting
Package Type SOIC
Pin Count 8
Bridge Type Half Bridge
Input Logic Compatibility CMOS, LSTTL, 3.3V, 5V
High and Low Sides Dependency Dependent
Maximum Operating Temperature +125 °C
Input Bias Current 60µA
Minimum Operating Temperature -40 °C
Dimensions 5 x 4 x 1.5mm
Time Delay 900ns
Fall Time 35ns
Rise Time 60ns
Width 4mm
Height 1.5mm
Length 5mm
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 20-02-2020, met een levertijd van 2 à 3 werkdagen.
Prijs Each (On a Reel of 2500)
1,38
(excl. BTW)
1,67
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
2500 - 2500
€ 1,38
€ 3.450,00
5000 +
€ 1,302
€ 3.255,00
*prijsindicatie
Related Products
Zero-voltage switching Triac trigger/driver ciruits which facilitate RFI-free ...
Description:
Zero-voltage switching Triac trigger/driver ciruits which facilitate RFI-free power regulation of resistive loads.
Gate Driver ICs from Infineon to control MOSFET ...
Description:
Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side configurations.
Gate Driver ICs from Infineon to control MOSFET ...
Description:
Gate Driver ICs from Infineon to control MOSFET or IGBT power devices in high-side and low-side configurations.
A range of full-bridge drivers designed to control ...
Description:
A range of full-bridge drivers designed to control MOSFET and IGBT power devices in 3-phase applications. The devices feature a maximum blocking voltage of 600 V and low-side control using CMOS and TTL compatible signal levels.