IRF8736PBF N-Channel MOSFET, 18 A, 30 V HEXFET, 8-Pin SOIC Infineon

  • RS-stocknr. 495-619
  • Fabrikantnummer IRF8736PBF
  • Fabrikant Infineon
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N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 18 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 5 mΩ
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Gate Source Voltage -20 V, +20 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 2.5 W
Minimum Operating Temperature -55 °C
Typical Turn-Off Delay Time 13 ns
Typical Turn-On Delay Time 12 ns
Transistor Material Si
Number of Elements per Chip 1
Typical Input Capacitance @ Vds 2315 pF@ 15 V
Maximum Operating Temperature +150 °C
Series HEXFET
Length 5mm
Dimensions 5 x 4 x 1.5mm
Height 1.5mm
Typical Gate Charge @ Vgs 17 nC @ 4.5 V
Width 4mm
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