- RS-stocknr.:
- 124-1664
- Fabrikantnummer:
- RFP70N06
- Fabrikant:
- onsemi
150 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in eentube van 50)
€ 1,415
(excl. BTW)
€ 1,712
(incl. BTW)
Aantal stuks | Per stuk | Per tube* |
50 - 200 | € 1,415 | € 70,75 |
250 - 950 | € 1,378 | € 68,90 |
1000 - 2450 | € 1,343 | € 67,15 |
2500 + | € 1,309 | € 65,45 |
*prijsindicatie |
- RS-stocknr.:
- 124-1664
- Fabrikantnummer:
- RFP70N06
- Fabrikant:
- onsemi
Datasheets
Wetgeving en compliance
Productomschrijving
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchilds proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 70 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 14 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 4.83mm |
Length | 10.67mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Typical Gate Charge @ Vgs | 120 nC @ 20 V |
Minimum Operating Temperature | -55 °C |
Height | 9.4mm |