N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
- RS-stocknr.:
- 124-9035
- Fabrikantnummer:
- 2N7002H6327XTSA2
- Fabrikant:
- Infineon
72000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (op een haspel van 3000)
€ 0,046
(excl. BTW)
€ 0,056
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 3000 - 3000 | € 0,046 | € 138,00 |
| 6000 - 12000 | € 0,039 | € 117,00 |
| 15000 + | € 0,037 | € 111,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 124-9035
- Fabrikantnummer:
- 2N7002H6327XTSA2
- Fabrikant:
- Infineon
Datasheets
Wetgeving en compliance
Productomschrijving
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Series | OptiMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.3mm |
| Transistor Material | Si |
| Length | 2.9mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
- RS-stocknr.:
- 124-9035
- Fabrikantnummer:
- 2N7002H6327XTSA2
- Fabrikant:
- Infineon