N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P
- RS-stocknr.:
- 125-8040
- Fabrikantnummer:
- IXFN200N10P
- Fabrikant:
- IXYS
110 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk
€ 28,73
(excl. BTW)
€ 34,76
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 1 | € 28,73 |
| 2 - 4 | € 25,82 |
| 5 - 9 | € 24,51 |
| 10 - 19 | € 21,98 |
| 20 + | € 21,44 |
- RS-stocknr.:
- 125-8040
- Fabrikantnummer:
- IXFN200N10P
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-227 |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 680 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 235 nC @ 10 V |
| Length | 38.23mm |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Maximum Operating Temperature | +175 °C |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Series | Polar HiPerFET |
| Height | 9.6mm |
- RS-stocknr.:
- 125-8040
- Fabrikantnummer:
- IXFN200N10P
- Fabrikant:
- IXYS